vs-mur1620ctpbf, VS-MUR1620CT-N3 ultrafast rectifier, 2 x 8 a fred pt ? features ? ultrafast recovery time ? low forward voltage drop ? 175 c operating junction temperature ? low leakage current ? compliant to rohs directive 2002/95/ec ? designed and qualified according to jedec-jesd47 ? halogen-free according to iec 61249-2-21 definition (-n3 only) description/applications vs-mur1620ctpbf is the state of the art ultrafast recovery rectifier specifically designed with optimized performance of forward voltage drop and ul trafast recovery time. the planar structure and th e platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. these devices are intended for use in the output rectification stage of smps, ups, dc/dc converters as well as freewheeling diode in low voltage inverters and chopper motor drives. their extremely optimized stored charge and low recovery current minimize the switch ing losses and reduce over dissipation in the switch ing element and snubbers. product summary package to-220ab i f(av) 2 x 8 a v r 200 v v f at i f 0.975 v t rr typ. see recovery table t j max. 175 c diode variation common cathode anode 13 2 base common cathode 2 common cathode anode to-220ab absolute maximum ratings parameter symbol test conditions max. units peak repetitive reverse voltage v rrm 200 v average rectified forward current per leg i f(av) 8.0 a total device rated v r , t c = 150 c 16 non-repetitive peak surge current per leg i fsm 100 peak repetitive forw ard current per leg i fm rated v r , square wave, 20 khz, t c = 150 c 16 operating junction and storage temperatures t j , t stg - 65 to 175 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditio ns min. typ. max. units breakdown voltage, blocking voltage v br , v r i r = 100 a 200 - - v forward voltage v f i f = 8 a - - 0.975 i f = 8 a, t j = 150 c - - 0.895 reverse leakage current i r v r = v r rated - - 5 a t j = 150 c, v r = v r rated - - 250 junction capacitance c t v r = 200 v - 25 - pf series inductance l s measured lead to lead 5 mm from package body - 8.0 - nh www.kersemi.com vs-mur1620ctpbf, VS-MUR1620CT-N3 www.vishay.com vishay semiconductors revision: 11-aug-11 1 document number: 94078 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ultrafast rectifier, 2 x 8 a fred pt ? features ? ultrafast recovery time ? low forward voltage drop ? 175 c operating junction temperature ? low leakage current ? compliant to rohs directive 2002/95/ec ? designed and qualified according to jedec-jesd47 ? halogen-free according to iec 61249-2-21 definition (-n3 only) description/applications vs-mur1620ctpbf is the state of the art ultrafast recovery rectifier specifically designed with optimized performance of forward voltage drop and ul trafast recovery time. the planar structure and th e platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. these devices are intended for use in the output rectification stage of smps, ups, dc/dc converters as well as freewheeling diode in low voltage inverters and chopper motor drives. their extremely optimized stored charge and low recovery current minimize the switch ing losses and reduce over dissipation in the switch ing element and snubbers. product summary package to-220ab i f(av) 2 x 8 a v r 200 v v f at i f 0.975 v t rr typ. see recovery table t j max. 175 c diode variation common cathode anode 13 2 base common cathode 2 common cathode anode to-220ab absolute maximum ratings parameter symbol test conditions max. units peak repetitive reverse voltage v rrm 200 v average rectified forward current per leg i f(av) 8.0 a total device rated v r , t c = 150 c 16 non-repetitive peak surge current per leg i fsm 100 peak repetitive forw ard current per leg i fm rated v r , square wave, 20 khz, t c = 150 c 16 operating junction and storage temperatures t j , t stg - 65 to 175 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditio ns min. typ. max. units breakdown voltage, blocking voltage v br , v r i r = 100 a 200 - - v forward voltage v f i f = 8 a - - 0.975 i f = 8 a, t j = 150 c - - 0.895 reverse leakage current i r v r = v r rated - - 5 a t j = 150 c, v r = v r rated - - 250 junction capacitance c t v r = 200 v - 25 - pf series inductance l s measured lead to lead 5 mm from package body - 8.0 - nh
vs-mur1620ctpbf, VS-MUR1620CT-N3 dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition s min. typ. max. units reverse recovery time t rr i f = 1.0 a, di f /dt = 50 a/s, v r = 30 v - - 35 ns i f = 0.5 a, i r = 1.0 a, i rec = 0.25 a - - 25 t j = 25 c i f = 8 a di f /dt = 200 a/s v r = 160 v -20- t j = 125 c - 34 - peak recovery current i rrm t j = 25 c - 1.7 - a t j = 125 c - 4.2 - reverse recovery charge q rr t j = 25 c - 23 - nc t j = 125 c - 75 - thermal - mechanical specifications parameter symbol test conditi ons min. typ. max. units maximum junction and storage temperature range t j , t stg - 65 - 175 c thermal resistance, junction to case per leg r thjc --3.0 c/w thermal resistance, junction to ambient per leg r thja --50 thermal resistance, case to heatsink r thcs mounting surface, flat, smooth and greased -0.5- weight -2.0- g -0.07- oz. mounting torque 6.0 (5.0) - 12 (10) kgf cm (lbf in) marking device case style to-220ab mur1620ct www.kersemi.com vs-mur1620ctpbf, VS-MUR1620CT-N3 www.vishay.com vishay semiconductors revision: 11-aug-11 2 document number: 94078 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition s min. typ. max. units reverse recovery time t rr i f = 1.0 a, di f /dt = 50 a/s, v r = 30 v - - 35 ns i f = 0.5 a, i r = 1.0 a, i rec = 0.25 a - - 25 t j = 25 c i f = 8 a di f /dt = 200 a/s v r = 160 v -20- t j = 125 c - 34 - peak recovery current i rrm t j = 25 c - 1.7 - a t j = 125 c - 4.2 - reverse recovery charge q rr t j = 25 c - 23 - nc t j = 125 c - 75 - thermal - mechanical specifications parameter symbol test conditi ons min. typ. max. units maximum junction and storage temperature range t j , t stg - 65 - 175 c thermal resistance, junction to case per leg r thjc --3.0 c/w thermal resistance, junction to ambient per leg r thja --50 thermal resistance, case to heatsink r thcs mounting surface, flat, smooth and greased -0.5- weight -2.0- g -0.07- oz. mounting torque 6.0 (5.0) - 12 (10) kgf cm (lbf in) marking device case style to-220ab mur1620ct
vs-mur1620ctpbf, VS-MUR1620CT-N3 fig. 1 - typical forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics 1 10 t j = 175 c t j = 150 c t j = 25 c 0 1.8 0.6 1.0 v f - forward voltage drop (v) i f - instantaneous forward current (a) 100 0.2 1.4 0.1 0.4 0.8 1.2 1.6 0.01 0.1 1 10 100 0 100 150 v r - reverse voltage (v) i r - reverse current (a) t j = 175 c t j = 150 c t j = 125 c t j = 100 c t j = 25 c 0.001 200 250 50 100 1000 1 10 100 1000 10 v r - reverse voltage (v) c t - junction capacitance (pf) t j = 25 c 0.01 0.1 10 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) . . p dm t 1 t 2 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c 1 single pulse (thermal resistance) d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 www.kersemi.com vs-mur1620ctpbf, VS-MUR1620CT-N3 www.vishay.com vishay semiconductors revision: 11-aug-11 3 document number: 94078 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - typical forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics 1 10 t j = 175 c t j = 150 c t j = 25 c 0 1.8 0.6 1.0 v f - forward voltage drop (v) i f - instantaneous forward current (a) 100 0.2 1.4 0.1 0.4 0.8 1.2 1.6 0.01 0.1 1 10 100 0 100 150 v r - reverse voltage (v) i r - reverse current (a) t j = 175 c t j = 150 c t j = 125 c t j = 100 c t j = 25 c 0.001 200 250 50 100 1000 1 10 100 1000 10 v r - reverse voltage (v) c t - junction capacitance (pf) t j = 25 c 0.01 0.1 10 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) . . p dm t 1 t 2 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c 1 single pulse (thermal resistance) d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01
vs-mur1620ctpbf, VS-MUR1620CT-N3 fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - typical reverse recovery time vs. di f /dt fig. 8 - typical stored charge vs. di f /dt note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = rated v r 03 allowable case temperature (c) i f(av) - average forward current (a) 160 170 180 see note (1) 150 dc 140 130 6912 square wave (d = 0.50) rated v r applied 0612 average power loss (w) i f(av) - average forward current (a) 0 d = 0.01 d = 0.02 d = 0.05 d = 0.10 d = 0.20 d = 0.50 dc 39 2 4 10 6 8 rms limit 100 1000 t rr (ns) di f /dt (a/s) 20 i f = 30 a i f = 15 a i f = 8 a 60 40 v r = 160 v t j = 125 c t j = 25 c 30 50 10 100 1000 q rr (nc) di f /dt (a/s) 40 i f = 30 a i f = 15 a i f = 8 a 200 120 v r = 160 v t j = 125 c t j = 25 c 80 160 0 www.kersemi.com vs-mur1620ctpbf, VS-MUR1620CT-N3 www.vishay.com vishay semiconductors revision: 11-aug-11 4 document number: 94078 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - typical reverse recovery time vs. di f /dt fig. 8 - typical stored charge vs. di f /dt note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = rated v r 03 allowable case temperature (c) i f(av) - average forward current (a) 160 170 180 see note (1) 150 dc 140 130 6912 square wave (d = 0.50) rated v r applied 0612 average power loss (w) i f(av) - average forward current (a) 0 d = 0.01 d = 0.02 d = 0.05 d = 0.10 d = 0.20 d = 0.50 dc 39 2 4 10 6 8 rms limit 100 1000 t rr (ns) di f /dt (a/s) 20 i f = 30 a i f = 15 a i f = 8 a 60 40 v r = 160 v t j = 125 c t j = 25 c 30 50 10 100 1000 q rr (nc) di f /dt (a/s) 40 i f = 30 a i f = 15 a i f = 8 a 200 120 v r = 160 v t j = 125 c t j = 25 c 80 160 0
vs-mur1620ctpbf, VS-MUR1620CT-N3 fig. 9 - reverse recovery parameter test circuit irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr www.kersemi.com vs-mur1620ctpbf, VS-MUR1620CT-N3 www.vishay.com vishay semiconductors revision: 11-aug-11 5 document number: 94078 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve dened by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
to-220ab outline dimensions dimensions in millimeters and inches symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.25 4.65 0.167 0.183 e 10.11 10.51 0.398 0.414 3, 6 a1 1.14 1.40 0.045 0.055 e1 6.86 8.89 0.270 0.350 6 a2 2.56 2.92 0.101 0.115 e2 - 0.76 - 0.030 7 b 0.69 1.01 0.027 0.040 e 2.41 2.67 0.095 0.105 b1 0.38 0.97 0.015 0.038 4 e1 4.88 5.28 0.192 0.208 b2 1.20 1.73 0.047 0.068 h1 6.09 6.48 0.240 0.255 6, 7 b3 1.14 1.73 0.045 0.068 4 l 13.52 14.02 0.532 0.552 c 0.36 0.61 0.014 0.024 l1 3.32 3.82 0.131 0.150 2 c1 0.36 0.56 0.014 0.022 4 ? p 3.54 3.73 0.139 0.147 d 14.85 15.25 0.585 0.600 3 q 2.60 3.00 0.102 0.118 d1 8.38 9.02 0.330 0.355 t 90 to 93 90 to 93 d2 11.68 12.88 0.460 0.507 6 13 2 d d1 h1 q 13 2 c c d d 3 x b2 3 x b (b, b2) b1, b3 (h1) d2 detail b c a b l e1 lead tip e e2 ? p 0.014 a b m m 0.015 a b mm s eating plane c a2 a1 a a a lead assignments diode s 1. - anode/open 2. - cathode 3. - anode conforms to jedec outline to-220ab (6) (6) (7) (6) (7) e 2 x l1 (2) detail b s ection c - c and d - d view a - a ba s e metal plating (4) (4) c1 c (6) thermal pad (e) e1 (6) www.kersemi.com document number: 95222 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 08-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 to-220ab outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and tolerancin g as per asme y14.5m-1994 (2) lead dimension and fini sh uncontrolled in l1 (3) dimension d, d1 and e do not in clude mold flash. mold flash shall not exceed 0.127 mm (0.005" ) per side. these dimensions are measured at the outermost extremes of th e plastic body (4) dimension b1, b3 and c1 apply to base metal only (5) controlling dimensions: inches (6) thermal pad contour optional within dimensions e, h1, d2 and e1 (7) dimensions e2 x h1 define a zone where stamping and singulation irregularities are allowed (8) outline conforms to jedec to- 220, except a2 (maximum) and d2 (minimum) where dimensions are derived from the actual package outline symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.25 4.65 0.167 0.183 e 10.11 10.51 0.398 0.414 3, 6 a1 1.14 1.40 0.045 0.055 e1 6.86 8.89 0.270 0.350 6 a2 2.56 2.92 0.101 0.115 e2 - 0.76 - 0.030 7 b 0.69 1.01 0.027 0.040 e 2.41 2.67 0.095 0.105 b1 0.38 0.97 0.015 0.038 4 e1 4.88 5.28 0.192 0.208 b2 1.20 1.73 0.047 0.068 h1 6.09 6.48 0.240 0.255 6, 7 b3 1.14 1.73 0.045 0.068 4 l 13.52 14.02 0.532 0.552 c 0.36 0.61 0.014 0.024 l1 3.32 3.82 0.131 0.150 2 c1 0.36 0.56 0.014 0.022 4 ? p 3.54 3.73 0.139 0.147 d 14.85 15.25 0.585 0.600 3 q 2.60 3.00 0.102 0.118 d1 8.38 9.02 0.330 0.355 t 90 to 93 90 to 93 d2 11.68 12.88 0.460 0.507 6 13 2 d d1 h1 q 13 2 c c d d 3 x b2 3 x b (b, b2) b1, b3 (h1) d2 detail b c a b l e1 lead tip e e2 ? p 0.014 a b m m 0.015 a b mm s eating plane c a2 a1 a a a lead assignments diode s 1. - anode/open 2. - cathode 3. - anode conforms to jedec outline to-220ab (6) (6) (7) (6) (7) e 2 x l1 (2) detail b s ection c - c and d - d view a - a ba s e metal plating (4) (4) c1 c (6) thermal pad (e) e1 (6)
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